| 摘要 |
When a substrate W is processed, a ring-shaped protective wall is located above the substrate held by the substrate holding unit and extends in a circumferential direction of the substrate. A radial position of an external periphery of a lower end of the protective wall is the same as a radial position of an internal periphery of a peripheral portion of an upper surface of the substrate held by a substrate holding unit, or is located at a radial outside. A first gap is formed between the protective wall and an upper surface of the substrate, a second gap is formed between the protective wall and a wall that defines the upper opening of the cup, and when the interior space of the cup is exhausted, a gas present above the substrate is introduced through the first gap and the second gap into the interior space of the cup. |
