发明名称 半導体圧力センサ
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor pressure sensor that can measure pressure in the outside of a cap using a pressure sensitive element arranged in the cap without forming a through hole in the cap.SOLUTION: A semiconductor pressure sensor 1 comprises: a pressure sensitive element 10 detecting an ambient pressure; a substrate 20 on which the pressure sensitive element 10 is mounted and in which a groove 21 is formed; and a cap 30 covering the pressure sensitive element 10 on the substrate 20. The semiconductor pressure sensor 1 is further provided with, between the substrate 20 and the cap 30, a junction 41 bonding one part of the edge of the cap 30 and the substrate 20, and a non-junction 42 bringing the other part of the edge of the cap 30 and the substrate 20 into a non-bonding state. The groove 21 is opposed to the edge of the cap 30 on the non-junction 42.
申请公布号 JP6015384(B2) 申请公布日期 2016.10.26
申请号 JP20120260154 申请日期 2012.11.28
申请人 株式会社村田製作所 发明人 水上 憲三
分类号 G01L19/00 主分类号 G01L19/00
代理机构 代理人
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