| 摘要 |
The invention provides a sputtering target of high strength at high Ga ratio Cu-Ga alloy. The sputtering target comprises Ga bigger than than 22at% and less than 30at% in average and the balance being Cu and unavoidable impurities; the sputtering target comprises a columnar tissue that has a mixed phase of Gamma phase and Zeta phase and Ga is dissolved in the Cu; in the mixed phase for observing the COMPO image of the reflected electron image, the median of the length of the long shaft to the short shaft in the phase (intervening phase) of the tissue is from 5 to 60. |
