| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming an electrode by separating a transparent conductive film, in an electronic device having such a structure that a transparent conductive film is laminated on an amorphous oxide semiconductor, e.g., a bottom gate thin film transistor.SOLUTION: In a lamination structure where a polycrystalline transparent conductive film composed of an oxide containing indium or tin is deposited directly on an amorphous oxide semiconductor containing indium and gallium, an etching groove reaching the amorphous oxide semiconductor is formed by dry etching the polycrystalline transparent conductive film by using a mixture gas containing hydrocarbon and hydrogen but not containing halogen. A plurality of electrodes are fabricated by separating the polycrystalline transparent conductive film by means of the etching groove, thus manufacturing an electronic device having the amorphous oxide semiconductor between electrodes as a channel. |
