发明名称 |
HALFTONE PHASE SHIFT MASK BLANK, HALFTONE PHASE SHIFT MASK, AND PATTERN EXPOSURE METHOD |
摘要 |
In a halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film thereon, the halftone phase shift film is composed of a silicon base material consisting of silicon, nitrogen and 0-6 at% of oxygen, has a refractive index n of at least 2.4, an extinction coefficient k of 0.4-0.7, and a thickness of 40-67 nm. The halftone phase shift film is thin enough to be advantageous for photomask pattern formation, has chemical resistance against chemical cleaning, and maintains a necessary phase shift for phase shift function and a necessary transmittance for halftone function. |
申请公布号 |
EP3086180(A1) |
申请公布日期 |
2016.10.26 |
申请号 |
EP20160161074 |
申请日期 |
2016.03.18 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
KOSAKA, TAKURO;INAZUKI, YUKIO |
分类号 |
G03F7/28;G03F7/32 |
主分类号 |
G03F7/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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