| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a silicon single crystal of 1×10atoms/cmor less of carbon concentration without deteriorating a yield.SOLUTION: A production method for producing the silicon single crystal by an FZ method with a silicon crystal rod having a cone part and a tail part, which is produced by a CZ method, includes: a step for growing the silicon single crystal by zoning from the cone part to the tail part of the silicon crystal rod; and a carbon concentration measurement step for extracting a sample from an end of the tail part side of the silicon single crystal and measuring a carbon concentration of the extracted sample. When a measured value of the carbon concentration is more than 1×10atoms/cm, the sample is extracted again by cutting from an end of the tail part side, and the carbon concentration measurement step are repeatedly performed until the measurement value of the carbon concentration becomes 1×10atoms/cmor less, in the production method of the silicon single crystal. |
