发明名称 基板処理装置、及び、半導体装置の製造方法
摘要 PROBLEM TO BE SOLVED: To reduce a down time of an apparatus by elongating a maintenance cycle of a gas nozzle for film formation at the time of cleaning.SOLUTION: A substrate processing apparatus includes: a reaction tube 37 that constitutes a reaction chamber in which a substrate is processed; first film formation gas nozzles A1 and B1 that are provided inside the reaction tube 37 and supply film formation gas to the reaction chamber; second film formation gas nozzles A2 and B2 that are provided inside the reaction tube and supply film formation gas to the reaction chamber; and control means for performing control so that when the film formation gas is supplied from the first film formation gas nozzles to the reaction chamber, the film formation gas is not supplied from the second film formation gas nozzles and when the film formation gas is supplied from the second film formation gas nozzles, the film formation gas is not supplied from the first film formation gas nozzles, wherein the film formation gas supplied from the first film formation gas nozzles and the film formation gas supplied from the second film formation gas nozzles are the same as each other.
申请公布号 JP6008533(B2) 申请公布日期 2016.10.19
申请号 JP20120073750 申请日期 2012.03.28
申请人 株式会社日立国際電気 发明人 寿崎 健一
分类号 H01L21/31;C23C16/455 主分类号 H01L21/31
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