发明名称 |
Cleaning composition, method for producing semiconductor device, and cleaning method |
摘要 |
Provided are a cleaning composition which is capable of inhibiting the metal of a semiconductor substrate from corrosion, and has an excellent removability of plasma etching residues and/or ashing residues on the semiconductor substrate, a method for producing a semiconductor device, and a cleaning method using the cleaning composition. The cleaning composition for removing plasma etching residues and/or ashing residues formed on a semiconductor substrate, and a preparation method and a cleaning method for a semiconductor device, using the cleaning composition, wherein the cleaning composition includes (Component a) water; (Component b) an amine compound; (Component c) hydroxylamine and/or a salt thereof; (Component d) a quaternary ammonium compound; (Component e) an organic acid; and (Component f) a water-soluble organic solvent; and has a pH of 6 to 9. |
申请公布号 |
EP2386623(B1) |
申请公布日期 |
2016.10.19 |
申请号 |
EP20110166033 |
申请日期 |
2011.05.13 |
申请人 |
FUJIFILM CORPORATION |
发明人 |
INABA, TADASHI;TAKAHASHI, KAZUTAKA;TAKAHASHI, TOMONORI;MIZUTANI, ATSUSHI |
分类号 |
C11D11/00;C11D7/26;C11D7/32;C11D7/50 |
主分类号 |
C11D11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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