| 摘要 |
PROBLEM TO BE SOLVED: To provide an art capable of achieving low channel resistance in a semiconductor device having hetero junction which achieves normally-off by using an insulation gate part.SOLUTION: HFET 1 comprises: an electron transit layer 14; an electron supply layer 15; a drain electrode 22, a source electrode 28; and an insulation gate part 25 provided in a trench which pierces the electron supply layer 15 to reach a predetermined depth of the electron transit layer 14. The insulation gate part 25 includes a main part 25Am extending in a gate width direction and projected parts 25Bd, 25Bs which project from the main part 25Am along a gate length direction. |
