发明名称 半導体装置及び表示装置
摘要 A semiconductor device that includes transistors having the same polarity consumes less power and can prevent a decrease in amplitude of a potential output. The semiconductor device includes a first wiring having a first potential, a second wiring having a second potential, a third wiring having a third potential, a first transistor and a second transistor having the same polarity, and a plurality of third transistors for selecting supply of the first potential to gates of the first transistor and the second transistor or supply of the third potential to the gates of the first transistor and the second transistor and for selecting whether to supply one potential to drain terminals of the first transistor and the second transistor. A source terminal of the first transistor is connected to the second wiring, and a source terminal of the second transistor is connected to the third wiring.
申请公布号 JP6005441(B2) 申请公布日期 2016.10.12
申请号 JP20120183792 申请日期 2012.08.23
申请人 株式会社半導体エネルギー研究所 发明人 小山 潤
分类号 H03K19/0175;G09G3/20;G09G3/30;H01L21/822;H01L21/8234;H01L27/04;H01L27/08;H01L27/088;H01L29/786;H03K19/094;H03K19/0952;H03K23/44 主分类号 H03K19/0175
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