LASER EMISSION SYSTEM, HETEROSTRUCTURE AND ACTIVE ZONE COMPRISING COUPLED SUB-QUANTUMWELLS, USE FOR A LASER EMIISSION AT 1.55 MICROMETERS

摘要

An active zone for a light emission system including a series of layers at least a portion of which consists of antimony semiconductors III-V. The layers are arranged to form at least one quantum well surrounded by barriers for generating a light emission. The active zone also includes at least one layer forming an intermediate barrier arranged relative to the quantum well to form at least two quantum sub-wells coupled with each other. A heterostructure including at least one optical confinement layer surrounding at least one active zone; a laser emission system including one heterostructure deposited onto a substrate; and the use of an active zone for emitting a light beam having a wavelength of 1.55 μm are disclosed.