发明名称 |
Memristive system |
摘要 |
The present invention is related to a memristive system and a method to induce a memristive effect. An object of the present invention is to design a memristive system containing a simple structure to feedback the signal, to find a method of inducing a memristive effect implying a simple feedback step and to be able to significantly change the characteristics of the memristive effect according to the fed in parameters. This object is achieved by a memristive system comprising means for generating a spin polarization mechanism and means for generating a memory effect in the voltage-current phase plane, where these means are arranged in a feedback loop architecture, as well as by a method of inducing a memristive effect where a feedback loop is established by a combining a spin polarization process with the action of the classical Hall effect. |
申请公布号 |
EP2503556(B1) |
申请公布日期 |
2016.10.12 |
申请号 |
EP20120161274 |
申请日期 |
2012.03.26 |
申请人 |
TECHNISCHE UNIVERSITÄT DRESDEN |
发明人 |
CAI, WEIRAN;ELLINGER, FRANK |
分类号 |
G11C11/18;B82Y25/00;G01R33/00;G06N3/063;H01L43/04;H03B15/00 |
主分类号 |
G11C11/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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