| 摘要 |
A method for estimating junction or die temperature of a transistor comprises measuring turn-off voltage change with respect to change in time between a collector and emitter of a transistor in a phase of and inverter and peak voltage of the transistor between the collector and the emitter. Intermediate parameters of turn-off current, the turn- on current and on-state voltage drop based on the turn-off voltage change and the peak voltage are determined. The power or energy loss for one switching cycle of the transistor based on the turn-off current, the turn-on current and on-state voltage drop between the collector and emitter of the transistor is determined. The associated average die temperature for the transistor over the switching over the switching cycle is estimated based on the determined energy loss, observed inverter system temperature, such as coolant temperature of a coolant in a coolant system for cooling the inverter, and thermal characteristics of an inverter system, such as thermal resistance of a liquid cooled system. |
