HALFTONE PHASE SHIFT MASK BLANK AND HALFTONE PHASE SHIFT MASK

摘要

A halftone phase shift mask blank is provided comprising a transparent substrate and a halftone phase shift film which is composed of a silicon base material having a Si+N+O content of at least 90 at%, a Si content of 30-70 at%, a N+O content of 30-60 at%, and an O content of up to 30 at%, and has a thickness of up to 70 nm. The halftone phase shift film is thin enough for mask pattern processing, undergoes minimal pattern size variation degradation upon exposure to sub-200 nm radiation, and maintains a necessary phase shift and transmittance.