MONOS DEVICE HAVING BURIED METAL SILICIDE BIT LINE AND MANUFACTURING METHOD THEREOF

摘要

A MONOS device and method for making the device has a charge trapping dielectric layer, such as an oxide-nitride-oxide (ONO) layer, formed on a substrate. A recess is created through the ONO layer and in the substrate. A metal silicide bit line is formed in the recess and bit line oxide is formed on top of the metal silicide. A word line is formed over the ONO layer and the bit line oxide, and a low resistance silicide is provided on top of the word line. The silicide is formed by laser thermal annealing, for example.