发明名称 SILICON MELT CONTACTING MEMBER AND PROCESS FOR PRODUCTION THEREOF, AND PROCESS FOR PRODUCTION OF CRYSTALLINE SILICON
摘要 Provided are a silicon melt contact member which is markedly improved in liquid repellency to a silicon melt, which can retain the liquid repellency permanently, and which is suitable for production of crystalline silicon; and a process for efficient production of crystalline silicon, particularly, spherical crystalline silicon having high crystallinity, by use of the silicon melt contact member. A silicon melt contact member having a porous sintered body layer present on its surface, preferably the sintered body layer being present on a substrate of a ceramic material such as aluminum nitride, wherein the porous sintered body layer consists essentially of silicon nitride, has a thickness of 10 to 500 µm, and has, dispersed therein, many pores preferably having an average equivalent circle diameter of 1 to 25 µm at a pore-occupying area ratio of 30 to 80%, the pores connecting to each other to form communicating holes having a depth of 5 µm or more.
申请公布号 EP2669411(B1) 申请公布日期 2016.10.12
申请号 EP20120739533 申请日期 2012.01.26
申请人 YAMAGUCHI UNIVERSITY;TOKUYAMA CORPORATION 发明人 KOMATSU, RYUICHI;ITOH, HIRONORI;AZUMA, MASANOBU
分类号 C30B29/06;C01B33/02;C04B38/06;C30B11/00;H01L21/208;H01L31/04 主分类号 C30B29/06
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