| 摘要 |
An HEMT bias circuit (11) for an HEMT (1) with grounded source terminal (4) includes a dual supply operational amplifier (AMP 1); a resistor (RI); a first reference voltage source (VX); and a second reference voltage source (VY), the differential amplifier (AMP 1) having a positive input terminal connected with a drain terminal (3) of the HEMT (1), a negative input terminal connecting with the second reference voltage source (VY), and an output terminal connected with a gate terminal (2) of the HEMT (1), and the resistor (RI) having a terminal connected with the drain terminal (3) of the HEMT (1), and another terminal connected with the first reference voltage source (VX). This configuration reduces temperature dependency and power supply voltage dependency, and sufficiently attenuates noise superimposed on power supply voltage and negative voltage, and attains a greater degree of freedom in selecting a production process. |
