| 摘要 |
A charge generating region is arranged within a region of a polygonal pixel region excluding a corner portion thereof. A signal charge collecting region is arranged at a center portion of the pixel region on the inside of the charge generating region so as to be surrounded by the charge generating region. A photogate electrode is arranged on the charge generating region. A transfer electrode is arranged between the signal charge collecting region and the charge generating region. A semiconductor region has a portion located at the corner portion of the pixel region and the remaining portion located on the outside of the pixel region, and has a conductivity type opposite to that of the signal charge collecting region and an impurity concentration higher than that of surroundings thereof. A readout circuit is arranged in the semiconductor region. |
