| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of reducing the width of a guard ring region without requiring decrease in the number of guard rings nor reduction in depth of the guard ring, nor requiring a step for forming the guard ring which is complicated and takes time.SOLUTION: A guard ring 124 is formed by selectively introducing a lot of p-type impurities into a guard ring region GR of a semiconductor base body 110 from above an n-type impurity diffusion region 120 through a second mask M1, and then causing the p-type impurities to be thermally dispersed inside the semiconductor base body 110 so that a p-type impurity diffusion region 122 is formed in the n-type impurity diffusion region 120 when viewed from above, as well as in a portion deeper than the lower surface of the n-type impurity diffusion region 120 in cross section. |
