发明名称 SINGLE CRYSTAL GROWTH APPARATUS WITH LASER BEAM DIVISION DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a single crystal growth apparatus that is for floating molten zone type single crystal manufacture in which a single crystal is raised from a raw material rod, and can reduce laser power source costs.SOLUTION: The present invention relates to a single crystal growth device 100 which raises a single crystal from a raw material rod 1, the single crystal growth device 100 comprising: a semiconductor laser device 20 which has a laser power source 10 and emits semiconductor laser light 5 based upon electric power supplied by the laser power source 10; a laser light division device 30 which divides the semiconductor laser light 5 into M heating laser light beams 3; and laser irradiation heads 50-55 which emit the M heating laser light beams 3 toward the raw material rod 1. In the single crystal growth device 100, the laser light division device 30 comprises: a collimator lens which converts the semiconductor laser light into parallel light; a plurality of division mirrors which divide the semiconductor laser light into M semiconductor laser light beams; a plurality of attenuation mirrors which equalize laser light intensity among the M semiconductor laser light beams; and a condenser lens which condenses the M semiconductor laser light beams on optical fibers 41-45.SELECTED DRAWING: Figure 1
申请公布号 JP2016175813(A) 申请公布日期 2016.10.06
申请号 JP20150058640 申请日期 2015.03.20
申请人 AUREA WORKS CORP;INSTITUTE OF PHYSICAL & CHEMICAL RESEARCH 发明人 SANO NAOKI;KAGA NAOHIRO;TOKURA YOSHINORI;KANEKO YOSHIO
分类号 C30B13/24 主分类号 C30B13/24
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