| 摘要 |
PROBLEM TO BE SOLVED: To provide an image sensor pixel with improved performance, an image sensor, and a method of fabricating the same.SOLUTION: An image pixel 210 includes a photosensitive capacitor 230 and a transfer transistor 641. The photosensitive capacitor 230 includes an electrode 235, a conductive layer 233, a dielectric layer 232, and a photosensitive semiconductor material 231. The conductive layer 233 is disposed around the electrode 235, and the dielectric layer 232 is formed between the conductive layer 233 and the electrode 235. The photosensitive semiconductor material 231 is for generating an image signal in response to image light and is disposed between the dielectric layer 232 and the electrode 235. The transfer transistor 641 is coupled to read out the image signal from the electrode 235 of the photosensitive capacitor 230.SELECTED DRAWING: Figure 2 |
