| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing apparatus that can be enhanced in processing efficiency for wafers and also enhanced in yield of the processing.SOLUTION: A plasma processing apparatus includes a pressure-reducible vacuum container, a radical source that is disposed in a processing chamber inside the vacuum container and generates active species, a wafer stage which is disposed below the radical source in the processing chamber, a wafer being mounted on the upper surface of the wafer stage, and a lamp unit which is disposed between the radical source and the wafer stage in the processing chamber to heat the wafer, and also includes a flow path which is disposed at the center portion and the outer peripheral side of the lamp unit in the processing chamber and through which the active species flows downwards, and a control unit for adjusting supply of gas from a plurality of gas supply means for supplying processing gas to the central portion and the outer peripheral portion of the radical source.SELECTED DRAWING: Figure 1 |
