| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem occurring when ON voltage of a high temperature region of an IGBT cannot be reduced and reliability of the IGBT is degraded by temperature rise caused by a loss occurring in the IGBT.SOLUTION: In a power semiconductor module, a gate voltage applied to an IGBT 157 becomes equal to a Zener voltage and when a temperature coefficient is +16 mV/°C, the gate voltage becomes 15 V at a temperature of the IGBT 157 of 25°C, and when the temperature of the IGBT 157 is 150°C, the gate voltage becomes 17 V. Since the more the temperature of the IGBT 157 rises, the more the temperature of a Zener diode 160 rises, and the more a Zener voltage of the Zener diode 160 rises, the more the gate voltage of the IGBT 157 rises to decrease ON voltage of the IGBT 157, temperature rise of the IGBT 157 in a high temperature state can be reduced.SELECTED DRAWING: Figure 6 |
