| 摘要 |
A photoelectric conversion device (100) is provided, from the light incidence side, with a first photoelectric conversion unit (1) and a second photoelectric conversion unit (2). A light absorption layer of the first photoelectric conversion unit (1) contains a photosensitive material having a Perovskite-type crystal structure represented by the general formula R1NH3M1X3 or HC(NH2)2M1X3. The band-gap of a light absorption layer of the second photoelectric conversion unit (2) is narrower than the band-gap of the light absorption layer of the first photoelectric conversion unit. A reflection-preventing layer (3) and a transparent conductive layer (4) are provided, in that order, between the first photoelectric conversion unit (1) and the second photoelectric conversion unit (2) from the light incidence side. The reflection-preventing layer (3) and the transparent conductive layer (4) are in contact with one another, and the refractive index of the reflection-preventing layer (3) is lower than the refractive index of the transparent conductive layer (4). |
