发明名称 SEMICONDUCTOR DEVICE
摘要 A through hole 7 is a vertical hole. With respect to a plane including a center line CL of the through hole 7, when focusing on each region on either side of the center line CL, let a line segment connecting a first point X1 corresponding to the edge of an opening 10a of an insulating layer 10 and a second point X2 corresponding to the edge of a second opening 7b be a first line segment S1, let a line segment connecting the second point X2 and a third point X3 corresponding to a point at which the second opening 7b and a surface 10b of the insulating layer 10 intersect be a second line segment S2, and let a line segment connecting the third point X3 and the first point X1 be a third line segment S3. Then, a first area A1 of the insulating layer 10 positioned on one side with respect to the first line segment S1 is greater than the sum of a second area A2 of the insulating layer 10 surrounded by the first line segment S1, the second line segment S2, and the third line segment S3 and a third area A3 of the insulating layer 10 positioned on the other side with respect to the third line segment S3.
申请公布号 WO2016159322(A1) 申请公布日期 2016.10.06
申请号 WO2016JP60838 申请日期 2016.03.31
申请人 HAMAMATSU PHOTONICS K.K. 发明人 ISHIDA Atsushi;HOSOKAWA Noburo;NAGANO Terumasa;BABA Takashi
分类号 H01L21/3205;H01L21/768;H01L23/522;H01L23/532 主分类号 H01L21/3205
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