发明名称 SOLID-STATE IMAGING ELEMENT, IMAGING DEVICE, AND ELECTRONIC INSTRUMENT
摘要 The present technique relates to a solid-state imaging element, an imaging device, and an electronic instrument in which it is possible to make a reference voltage applied to a vertical transfer line substantially the same as a reset voltage of a floating diffusion unit. A reference voltage generation circuit that generates a reference voltage is constituted by the same circuit as a reset transistor, an amplification transistor, and a selection transistor in a pixel circuit, and, immediately before transferring an optical signal and a reset signal, application is made to a vertical transfer line. Thus, the same reference voltage as immediately after applying the reset signal to a floating diffusion is applied to the vertical transfer line. This technique is applicable to CMOS image sensors.
申请公布号 WO2016158482(A1) 申请公布日期 2016.10.06
申请号 WO2016JP58647 申请日期 2016.03.18
申请人 SONY SEMICONDUCTOR SOLUTIONS CORPORATION 发明人 HANZAWA Katsuhiko;KAJI Yuuichi
分类号 H04N5/378 主分类号 H04N5/378
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