SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

This semiconductor device manufacturing method involves: a first step for providing a first wiring 3 on a first surface 2a of a semiconductor substrate 2; a second step for mounting a light transmitting substrate 5 on the first surface 2a; a third step for making the semiconductor substrate 2 thinner such that the semiconductor substrate 2 is less thick than the light transmitting substrate 5; a fourth step for forming a through-hole 7 in the semiconductor substrate 2; a fifth step for providing a resin insulation layer 10 by dip coating using a first resin material; a sixth step for forming a contact hole 16 on the resin insulation layer 10; and a seventh step for providing a second wiring 8 on the surface 10b of the resin insulation layer 10 and electrically connecting the first wiring 3 and the second wiring 8 in the contact hole 16.