| 摘要 |
This magnetoresistive effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer sandwiched between the first and second ferromagnetic metal layers, wherein: the tunnel barrier layer has a spinel structure represented by the compositional formula AGa2Ox(0<x≤4); and the A site represents a non-magnetic divalent positive ion comprising one or more types selected from a group consisting of magnesium, zinc and cadmium. |
