SWITCHING DEVICE AND ELECTRONIC CIRCUIT

摘要

A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.

主权项

1. A switching device including: a switching element which has a first electrode, a second electrode and a third electrode and in which on-oft control is performed between the second electrode and the third electrode by applying a drive voltage between the first electrode and the second electrode in a state where a potential difference is applied between the second electrode and the third electrode;
a drive terminal electrically connected to the second electrode for applying the drive voltage; and a short-circuit capacity improving resistance that is interposed in a current path between the drive terminal and the second electrode, is disposed in a position separated from at least one of the drive terminal and the second electrode, and has a predetermined resistance value.