METHOD OF FORMING FINE PATTERN OF SEMICONDUCTOR DEVICE

摘要

A method of fabricating a semiconductor device is disclosed. The method may include forming an target layer on a substrate, forming a mask pattern on a target layer, performing a first process to etch the target layer and form a first sub-trench, and performing a second process to further etch the target layer and form a second sub-trench. First and second sidewall patterns may be formed on a sidewall of the mask pattern to be used as an etch mask in the first and second processes, respectively. Outer sidewalls of the first and second sidewall patterns may be formed to have different angles with respect to a top surface of the substrate.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
forming an etch target layer on a substrate; forming a mask pattern on the etch target layer; performing a first etch process to etch the etch target layer and form a first sub-trench, the mask pattern and a first sidewall pattern formed on a sidewall of the mask pattern being used as a first etch mask in the first etch process; and performing a second etch process to further etch the etch target layer under the first sub-trench and form a second sub-trench, the mask pattern and a second sidewall pattern formed on the sidewall of the mask pattern being used as a second etch mask in the second etch process, wherein an outer sidewall of the first sidewall pattern has a first angle with respect to a top surface of the substrate, and an outer sidewall of the second sidewall pattern has a second angle different from the first angle with respect to the top surface of the substrate.