发明名称 |
METHODS OF FORMING DIFFERENT SIZED PATTERNS |
摘要 |
A method includes forming a template portion to provide a first opening trench portion surrounding a first isolated pattern, and forming an array of pillars on an underlying layer; forming a separation wall layer including first separation wall portions surrounding sidewalls of the pillars, and forming second separation wall portions covering sidewalls of the first opening trench portion; forming a block copolymer layer on the separation wall layer; forming first domains in gaps between the pillars, and forming second domains surrounding and separating the first domains by annealing the block copolymer layer; forming second openings by selectively removing the first domains; forming third openings between the second openings, and forming a fourth opening adjacent to the first isolated pattern by selectively removing the pillars and the template portion; and forming fifth openings, which extend from the second and third openings and penetrate the underlying layer, and forming a sixth opening, which extends from the fourth opening and penetrates the underlying layer. |
申请公布号 |
US2016293443(A1) |
申请公布日期 |
2016.10.06 |
申请号 |
US201514850419 |
申请日期 |
2015.09.10 |
申请人 |
SK hynix Inc. |
发明人 |
BAN Keun Do;PARK Jong Cheon;HEO Jung Gun;KIM Hong Ik;BOK Cheol Kyu |
分类号 |
H01L21/311;H01L21/02;H01L21/033 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming patterns, the method comprising:
forming a template portion to provide a first opening trench portion surrounding a first isolated pattern, and forming an array of pillars on an underlying layer; forming a separation wall layer including first separation wall portions surrounding sidewalls of the pillars, and forming second separation wall portions covering sidewalls of the first opening trench portion; forming a block copolymer layer on the separation wall layer; forming first domains in gaps between the pillars, and forming second domains surrounding and separating the first domains by annealing the block copolymer layer; forming second openings by selectively removing the first domains; forming third openings between the second openings, and forming a fourth opening adjacent to the first isolated pattern by selectively removing the pillars and the template portion; and forming fifth openings, which extend from the second and third openings and penetrate the underlying layer, and forming a sixth opening, which extends from the fourth opening and penetrates the underlying layer. |
地址 |
Gyeonggi-do KR |