| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device which improves data retention properties and achieves reduction in power consumption.SOLUTION: In the semiconductor device, a transistor which has a wide gap semiconductor is used and the transistor has a trench structure having a trench for gate electrodes 148a, 148b and a trench for element isolation. Even when a distance between a source electrode and a drain electrode is shortened, by setting a depth of the trench for the gate electrode accordingly, exertion of a short channel effect can be inhibited.SELECTED DRAWING: Figure 1 |
