发明名称 SOLAR CELL AND MANUFACTURING METHOD OF BACK ELECTRODES THEREOF
摘要 A solar cell and manufacturing method of back electrodes thereof are disclosed. The method includes a step of implementing a screen printing process to a semiconductor substrate. The method also includes a step of measuring a deviation which exists between laser ablation recesses and back electrodes in the screen printing process. The method further includes a step of adjusting the distance between the laser ablation recess and the back electrode according to the deviation. After adjusting, a deviation between laser ablation recesses and back electrodes will be controlled to a narrower range when the screen printing process is implemented to another semiconductor substrate. Thus, the defect is caused by the back electrodes incompletely covering the laser ablation recesses can be improved significantly.
申请公布号 US2016293785(A1) 申请公布日期 2016.10.06
申请号 US201615085202 申请日期 2016.03.30
申请人 NEO SOLAR POWER CORP. 发明人 PEI Shan-Chuang;HUANG Shao-Wei;HSU Wei-Chih
分类号 H01L31/0224;H01L31/0216 主分类号 H01L31/0224
代理机构 代理人
主权项 1. A manufacturing method of back electrodes of a solar cell, comprising: (a) providing a semiconductor substrate doped with a first type dopant, the semiconductor substrate has a first surface and a second surface opposite thereto, the first surface defines at least m number of first openings and m being an integer greater than 1, the first openings being arranged alternately along an X axis direction, the centers between adjacent first openings being separated by a first distance a; (b) providing a screen defining at least m number of screen holes, the screen holes being alternately arranged along the X axis direction, the centers of adjacent screen holes being substantially separated by the first distance a, with the m number of screen holes corresponding to respective first openings; (c) forming at least m number of back electrodes on the first surface via the screen; (d) measuring a largest distance s defined along the X axis direction between the centers of the back electrodes and the centers of the first openings underneath; and (e) adjusting a distance between the centers of adjacent first openings of another semiconductor substrate to be a second distance b according to the largest distance s, wherein the second distance b being greater than the first distance a.
地址 Hsinchu City TW