INTEGRATED CIRCUIT PRODUCT COMPRISING LATERAL AND VERTICAL FINFET DEVICES

摘要

One example of a novel integrated circuit product disclosed herein includes, among other things, a lateral FinFET device comprising a first gate structure having a first upper surface positioned above a semiconductor substrate and a vertical FinFET device comprising a second gate structure having a second upper surface positioned above the semiconductor substrate, wherein the first upper surface of the first gate structure is positioned at a first height level above a reference surface of the semiconductor substrate and the second upper surface of the second gate structure is positioned at a second height level above the reference surface of the semiconductor substrate, the first height level being greater than the second height level.

主权项

1. An integrated circuit product, comprising:
a lateral FinFET device comprising a first gate structure having a first upper surface positioned above a semiconductor substrate; and a vertical FinFET device comprising a second gate structure having a second upper surface positioned above said semiconductor substrate, wherein said first upper surface of said first gate structure is positioned at a first height level above a horizontally-oriented reference surface of said semiconductor substrate, said second upper surface of said second gate structure is positioned at a second height level above said reference surface of said semiconductor substrate, said first height level being greater than said second height level.