Semiconductor Device with Strained Layer

摘要

A semiconductor device and method of fabricating thereof is described that includes a substrate including at least one fin, at least one gate stack formed on a top surface of the at least one fin, a first inter-layer dielectric (ILD) layer formed on the top surface of the at least one fin, and a strained layer formed at least on a top surface of the at least one gate stack, wherein the strained layer is configured to provide a strain force to the at least one gate stack.

主权项

1. A method of forming a semiconductor device, the method comprising:
forming a gate stack over a substrate; forming a first inter-layer dielectric (ILD) layer over the substrate, an upper surface of the gate stack being exposed after forming the first ILD layer; forming a pre-strained layer over the upper surface of the gate stack and the first ILD layer, the pre-strained layer being a semiconductor layer; forming a second ILD layer over the pre-strained layer; and after forming the second ILD layer, transforming the pre-strained layer into a strained layer.