| 发明名称 |
PATTERNED STRUCTURE OF A SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF |
| 摘要 |
A patterned structure of a semiconductor device includes a substrate, a first feature and a second feature. The first feature and the second feature are disposed on the substrate, and either of which includes a vertical segment and a horizontal segment. There is a distance between the vertical segment of the first feature and the vertical segment of the second feature, and the distance is less than the minimum exposure limits of an exposure apparatus. |
| 申请公布号 |
US2016293726(A1) |
申请公布日期 |
2016.10.06 |
| 申请号 |
US201514710602 |
申请日期 |
2015.05.13 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Huang Rai-Min;Tseng I-Ming;Huang Tong-Jyun;Li Kuan-Hsien |
| 分类号 |
H01L29/66;H01L21/311;H01L21/027;H01L27/088;H01L21/8234;H01L29/06;H01L29/40 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A patterned structure of a semiconductor device, comprising:
a substrate; a first feature disposed on the substrate, wherein the first feature comprises a vertical segment and a horizontal segment; and a second feature disposed on the substrate, wherein the second feature comprises a vertical segment and a horizontal segment, and a distance between the vertical segment of the first feature and the vertical segment of the second feature is less than a minimum feature size generated by an exposure apparatus. |
| 地址 |
Hsin-Chu City TW |
