SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes a substrate, an initial layer, and a buffer stack structure. The initial layer is located on the substrate and includes aluminum nitride (AlN). The buffer stack structure is located on the initial layer and includes a plurality of base layers and at least one doped layer positioned between two adjacent base layers. Each of the base layers includes aluminum gallium nitride (AlGaN), and the doped layer includes AlGaN or boron aluminum gallium nitride (BAlGaN). In the buffer stack structure, concentrations of aluminum in the base layers gradually decrease, concentrations of gallium in the base layers gradually increase, the base layers do not contain carbon substantially, and dopants in the doped layer include carbon or iron.

主权项

1. A semiconductor device comprising:
a substrate; an initial layer located on the substrate, the initial layer comprising aluminum nitride; and a buffer stack structure located on the initial layer, the buffer stack structure comprising a plurality of base layers and at least one doped layer positioned between two adjacent base layers, each of the base layers comprising aluminum gallium nitride, the at least one doped layer comprising aluminum gallium nitride or boron aluminum gallium nitride, wherein in the buffer stack structure, concentrations of aluminum in the base layers gradually decrease, concentrations of gallium in the base layers gradually increase, the base layers do not contain carbon substantially, and dopants in the at least one doped layer comprise carbon or iron.