| 主权项 |
1. A magneto-resistive effect element (MR element), comprising:
a first shield layer, a second shield layer, an inner shield layer that is positioned between the first shield layer and the second shield layer, that faces the first shield layer, and that faces an air bearing surface (ABS), and a multilayer film that is positioned between the first shield layer and the second shield layer, wherein the multilayer film comprises
a free layer having a magnetization direction that fluctuates relative to an external magnetic field,a first pinned layer that is positioned closer to the first shield layer than the free layer, and having a magnetization direction that is fixed relative to the external magnetic field,a nonmagnetic spacer layer that is positioned between the free layer and the first pinned layer,a second pinned layer that is positioned closer to the first shield layer than the first pinned layer, and that fixes the magnetization direction of the first pinned layer, andan antiferromagnetic layer that is positioned closer to the first shield layer than the second pinned layer, and that is exchange-coupled with the second pinned layer; the antiferromagnetic layer faces the back surface of the inner shield layer viewed from the ABS; and the MR element comprises an insulating layer between the antiferromagnetic layer and the inner shield layer, wherein the second pinned layer comprises a first part facing the back surface of the inner shield layer and a second part that makes contact with the first part, and that extends to the ABS between the first part and the first pinned layer and between the inner shield layer and the first pinned layer, and the insulating layer is positioned between the first part and the inner shield layer, and between the antiferromagnetic layer and the inner shield layer. |
