发明名称 MAGNETO-RESISTIVE EFFECT ELEMENT WITH RECESSED ANTIFERROMAGNETIC LAYER
摘要 A magneto-resistive effect element has a first shield layer, a second layer, and a multilayer film that is positioned between the first shield layer and the second shield layer. The multilayer film has a free layer, a first pinned layer, a nonmagnetic spacer layer, a second pinned layer that fixes a magnetization direction of the first pinned layer, and an antiferromagnetic layer that is exchange-coupled with the second pinned layer. The antiferromagnetic layer is positioned away from an air bearing surface (ABS). The second pinned layer has a first part that is positioned away from the ABS, and a second part that makes contact with the first part, and that extends to the ABS parallel to the first pinned layer; and the first part has a first layer that makes contact with the antiferromagnetic layer, a second layer that makes contact with the second part, and a layer that is positioned between the first layer and the second layer, and that exchange-couples the first layer and the second layer in an anti-parallel orientation.
申请公布号 US2016293187(A1) 申请公布日期 2016.10.06
申请号 US201514672638 申请日期 2015.03.30
申请人 TDK Corporation 发明人 MAKINO Kenzo;MIURA Satoshi
分类号 G11B5/39 主分类号 G11B5/39
代理机构 代理人
主权项 1. (canceled)
地址 Tokyo JP