发明名称 |
ULTRAVIOLET LIGHT EMITTING DIODES WITH TUNNEL JUNCTION |
摘要 |
An example ultraviolet (UV) light emitting diode (LED) is described herein. The UV LED can include an n-doped contact region, an active region configured to emit UV light that is arranged between an n-doped region and a p-doped region, and a tunnel junction. The tunnel junction is arranged between the n-doped contact region and the p-doped region. In addition, the tunnel junction can include a heavily p-doped region, a degenerately n-doped region, and a semiconductor region arranged between the heavily p-doped region and the degenerately n-doped region. Each of the heavily p-doped region and the degenerately n-doped region has a gradually varied material energy bandgap to reduce respective depletion barriers within the heavily p-doped region and the degenerately n-doped region. |
申请公布号 |
WO2016160720(A1) |
申请公布日期 |
2016.10.06 |
申请号 |
WO2016US24552 |
申请日期 |
2016.03.28 |
申请人 |
OHIO STATE INNOVATION FOUNDATION |
发明人 |
RAJAN, Siddharth;KRISHNAMOORTHY, Sriram;ZHANG, Yuewei |
分类号 |
H01L33/06;H01L29/08 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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