| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile SRAM capable of reducing deterioration in reliability of a nonvolatile memory element without deteriorating SNM.SOLUTION: A domain wall moving element DW1 constituting a nonvolatile SRAM comprises an MTJ part 10 and a domain wall moving part 20. The MTJ part 10 comprises a reference layer 12, a tunnel barrier layer (non-magnetic layer) 14, and a magnetic region 22b. The domain wall moving part 20 comprises a magnetic layer 22, and spin injection layers 24a and 24b made of a magnetic substance. The magnetic layer 22 comprises a magnetic region 22a, a magnetic region 22b adjacent to the magnetic region 22a, and a magnetic region 22c adjacent to the magnetic region 22b. The magnetic region 22a is bonded to the spin injection layers 24a. The magnetic region 22b is bonded to the tunnel barrier layer 14 of the MTJ part 10. The magnetic region 22c is bonded to the spin injection layer 24b. That is, the MTJ part 10 and the domain wall moving part 20 share the magnetic region 22b.SELECTED DRAWING: Figure 2 |
