| 摘要 |
The semiconductor device according to the present invention comprises: a semiconductor layer comprising an active part and a gate finger part; an MIS transistor formed in the active part and comprising a gate trench, and a source region, a channel region and a drain region sequentially along a side of the gate trench; a plurality of first gate finger trenches formed by extensions of the gate trench in the gate finger part; gate electrodes embedded in the gate trench and the first gate finger trenches; first bottom impurity regions of the second conductivity type formed at least on the bottoms of the first gate finger trenches; a gate finger traversing the plurality of fist finger gate trenches and being electrically connected to the gate electrodes; and an electric field relaxing region of the second conductivity type formed between neighboring first gate finger trenches and being deeper than the bottoms of the first gate finger trenches. |
