NITRIDE SEMICONDUCTOR DEVICE

摘要

The present invention is provided with: a substrate (120); a nitride semiconductor laminated body (101), which is disposed on the substrate (120), and which has a channel region; a first electrode (107) and a second electrode (108), which are disposed on the nitride semiconductor laminated body (101); a first p-type nitride semiconductor layer (105) that is disposed between the first electrode (107) and the second electrode (108); and a first gate electrode (106) that is disposed on the first p-type nitride semiconductor layer (105). The nitride semiconductor laminated body (101) has a first recessed section (111), and at least a part of the first p-type nitride semiconductor layer (105) is disposed on the inner side of the first recessed section (111), and is separated from a first recessed section side surface (111a).