PROTECTED THROUGH SEMICONDUCTOR VIA (TSV)

摘要

Method for forming a through semiconductor via (TSV) in a semiconductor wafer comprising: etching an annular recess into a front side of the semiconductor wafer, the annular recess surrounding a pillar of the semiconductor material; filling the annular recess with an insulative material to form an insulative annulus; etching a recess into the front side in the pillar of the semiconductor material; filling the recess in the portion of the semiconductor material with a metal to form a through semiconductor via (TSV); thinning the semiconductor wafer from a backside of the semiconductor wafer and stopping on the insulative annulus to expose the pillar of the semiconductor material; recessing the pillar of the semiconductor material from the back side to form a recess that exposes an end of the TSV; and filling the recess with a metal to a level at least even with a level of the insulative annulus.

主权项

1. A method for forming a through semiconductor via (TSV) comprising:
obtaining a semiconductor wafer comprising a semiconductor material having a front side and a back side; etching an annular recess into the front side so as to extend only partially through the semiconductor wafer, the annular recess surrounding a pillar of the semiconductor material; filling the annular recess with an insulative material to form an insulative annulus; etching a recess into the front side in the pillar of the semiconductor material, the recess extending to a depth less than a depth of the insulative annulus in the semiconductor wafer; filling the recess in the portion of the semiconductor material with a metal to form a through semiconductor via (TSV); thinning the semiconductor wafer from the backside and stopping on the insulative annulus to expose the pillar of the semiconductor material and stopping the thinning before exposing the TSV in the pillar of the semiconductor material; recessing the pillar of the semiconductor material from the back side to form a recess that exposes an end and a side of the TSV; and filling the recess with a metal to a level at least even with a level of the insulative annulus.