REWRITING METHOD FOR SEMICONDUCTOR STORAGE APPARATUS, AND SEMICONDUCTOR STORAGE APPARATUS

摘要

The present invention includes: a first rewriting step for applying a precharge voltage to both a plurality of bit lines and a plurality of source lines; a second rewriting step for applying a rewriting voltage to either a selected bit line or a selected source line; a third rewriting step for applying the rewriting voltage to both the selected bit line and the selected source line; a fourth rewriting step for applying the precharge voltage to either the selected bit line or the selected source line; and a fifth rewriting step for applying the precharge voltage to both the selected bit line and the selected source line.