IMPROVED CASCODE RADIO FREQUENCY POWER AMPLIFIER

摘要

An improved cascode radio frequency power amplifier. A common-source-stage transistor gate G1, a common-source-stage transistor source S, a common-gate-stage transistor gate G2 and a common-gate-stage transistor drain D are transversely disposed on a substrate. A radio frequency input end RFin is connected to the common-source-stage transistor gate G1 by means of a metal wire, the common-source-stage transistor source S is connected to a grounding hole array (402) by means of a metal wire, the common-gate-stage transistor gate G2 is connected to a bias circuit by means of a metal wire (403), and the common-gate-stage transistor drain D is connected to a radio frequency output end RFout by means of a metal wire. By using a cascode structure and optimizing a layout structure, the radio frequency power amplifier has performance advantages of high gain, high power, high linearity, high efficiency and the like; a layout area equivalent to that of a single-transistor common-source structure radio frequency power amplifier is maintained, so that low-cost advantages are achieved.