| 摘要 |
The invention relates to a method for coating semiconductor wafers (120) with an epitaxially deposited layer in an epitaxial reactor (100), wherein, in a coating operation, one or more semiconductor wafers (120) are arranged on respective susceptors (110) in the epitaxial reactor (100) and a first deposition gas for coating the at least one semiconductor wafer (120) is conducted through the epitaxial reactor (100), and wherein a cleaning operation is performed after several coating operations, in the case of which cleaning operation a first etching gas and then a second deposition gas are conducted through the epitaxial reactor (100), wherein at least one intermediate cleaning operation is performed between two successive cleaning operations, in the case of which intermediate cleaning operation a second etching gas is conducted through the epitaxial reactor (100) between two immediately successive coating operations, without a deposition gas being conducted through the epitaxial reactor (100). |
