| 摘要 |
A field effect transistor has a plurality of cells (52) provided on a first straight line (90). Each cell has a plurality of multi-finger electrodes and is connected to a gate terminal electrode (33) and a drain terminal electrode (53). The multi-finger electrode has at least two finger gate electrodes, a finger drain electrode, and a finger source electrode. The gate terminal electrode connects the finger gate electrodes of two adjoining cells in common. The drain terminal electrode connects the finger drain electrodes of two adjoining cells in common. The finger gate electrode of one cell of two adjoining cells and the finger gate electrode of another cell of the two adjoining cells cross perpendicularly. The gate terminal electrode and the drain terminal electrode are provided alternately in a region where the finger gate electrodes of the two adjoining cells cross. |
