| 摘要 |
PROBLEM TO BE SOLVED: To provide a diode with soft recovery behavior without increasing power loss at the time of conduction.SOLUTION: The diode includes: a first semiconductor region (101) of a first conductivity type; second semiconductor regions (102) of a second conductivity type provided in the first semiconductor region (101); a third semiconductor region (105) of the first conductivity type provided in the first semiconductor region (101) and having a higher impurity concentration than the first semiconductor region (101); a first main electrode (106) ohmic-connected to the second semiconductor regions (102); and a second main electrode (107) ohmic-connected to the third semiconductor region (105). Fourth semiconductor regions (104) of the first conductivity type having a higher impurity concentration than the first semiconductor region (101) are partially provided between the first semiconductor region (101) and the second semiconductor regions (102). |
