| 摘要 |
A sputtering head comprises a receiving area for a sputtering target (target receptacle). The sputtering head comprises one or more magnetic field sources so as to generate a stray magnetic field. The magnetic north and the magnetic south of at least one magnetic field source, between which the stray field forms, are located 10 mm or less, preferably 5 mm or less, and particularly preferably approximately 1 mm apart. It was found that, notably when sputtering at a high sputtering gas pressure of 0.5 mbar or more, the degree of ionization of the sputtering plasma, and consequently also the ablation rate of the sputtering target, can be locally adjusted by such a locally effective magnetic field. This allows the thicknesses of the layers that are obtained to be more homogeneous over the surface of the substrate. Advantageously, the sputtering head additionally comprises a solid state insulator, which surrounds the base body comprising the target receptacle and the sputtering target (all connected to potential) and electrically insulates the same from the shield that spatially limits the material ablation to the sputtering target (connected to ground). |
